Soitec kicks off European project to develop future high-frequency semiconductors

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SOITEC
SOITEC

Soitec kicks off European project

to develop future high-frequency semiconductors

Bernin, France, 10th September 2024 – A European research and industry consortium led by Soitec, a world leader in the design and manufacture of innovative semiconductor materials, has begun work to develop a future generation of high-frequency semiconductors based on Indium Phosphide (InP).

These technologies are set to address applications ranging from photonics for mega data centers and AI to radio frequency front-ends and integrated antennas critical for 6G mobile communication, Sub-THz radar sensing and beyond.

Indium phosphide (Inp) devices can operate at frequencies approaching or exceeding 1 terahertz (THz), offering superior speeds and increased energy-efficiency compared to silicon technologies.

The 27-member consortium, Move2THz, aims to lay the groundwork for a robust European supply and manufacturing ecosystem for InP semiconductors and tackle barriers to their wider adoption, including the cost and availability of InP-based advanced substrates. The three-year project is a recipient of European Union funding as well as top-up financing from the governments of France, Switzerland, Germany, Sweden, the Netherlands and Belgium.

Emmanuelle Bely, Soitec General Secretary, stated:

“This project marks a key milestone in the integration of ever more powerful and energy-efficient semiconductor technologies. Together, we are paving the way for innovation based on indium phosphide that will transform critical sectors such as 6G telecommunications, photonics and artificial intelligence. Furthermore, it fully embodies our shared ambition to create a strong and autonomous European ecosystem capable of meeting the technical and economic challenges to large-scale adoption of these cutting-edge technologies."

Work formally began at a July 9-10 kick-off meeting at Soitec headquarters in Bernin, France.

The consortium members are:

France

Soitec (project lead)
French Alternative Energies and Atomic Energy Commission
STMicroelectronics
National Center for Scientific Research
Institute of Electronics, Microelectronics and Nanotechnology
InPACT
III-V Lab
Almae Technologies
The University of Bordeaux

Germany

Fraunhofer-Gesellschaft (EMFT and IZM)
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
Aixtron
University of Duisburg-Essen
Freiberger Compound Materials
Microwave Photonics
Advanced Modeling Solutions (AdMOS)

Belgium

Imec
Université catholique de Louvain
Incize

Switzerland

Diramics
ETH Zürich
Albis Optoelectronics

Sweden

Chalmers University of Technology
Low Noise Factory

The Netherlands

Eindhoven University of Technology
Smart Photonics

Lithuania

Teraglobus

About Move2THz

Move2THz is supported by the Chips Joint Undertaking and its members, including the top-up funding by National Authorities of France, Switzerland, Germany, Sweden, the Netherlands, and Belgium, under Grant Agreement n° 101139842.