POET Technologies Provides Update on 100-nm Initiative, Process Equipment Upgrade, and Technology Design Kits

TORONTO, ONTARIO and STORRS, CONNECTICUT--(Marketwired - May 27, 2014) - POET Technologies Inc. (TSX VENTURE:PTK)(POETF) ("the Company") - developer of the planar opto-electronic technology (POET) platform for monolithic fabrication of integrated circuit devices containing both electronic and optical elements on a single semiconductor wafer - today announced a progress update on the 100-nm initiative, on the upgrade of its molecular beam epitaxy (MBE) system and on the technology design kit for the Planar Electronic Technology (PET) subset of the POET process.

100-nm Initiative

This milestone (M-8) is associated with reducing the feature size of key POET devices to the 100-nm range in scale. We had previously achieved sub-200-nm scaling as announced in the first quarter. While work progresses to drive down feature size further, our technical team now believes that it will achieve this milestone in the near-term.

Among the technical challenges addressed by the team are short-channel effects and the development and implementation of a novel technique based on using a non-gold based contact, without liftoff, to achieve self-alignment. This results in a general digital device format for III-V technologies. Many of these processes have been captured as new intellectual property for the Company by submission of patent applications.

Mr. Peter Copetti, Executive Chairman and interim CEO, noted, "The team has worked relentlessly through multiple hurdles on its way to completion of the 100-nm milestone. The scale-down to sub-100-nm scale will demonstrate our ability to fabricate competitive digital devices with III-V materials to a point that has never been demonstrated before."

The technical team has targeted the end of the second quarter 2014 for completion of this milestone.

Upgraded Molecular Beam Epitaxy (MBE)

The MBE system is a key piece of process equipment on the POET pilot line. Earlier this year, the Company announced that there was a requirement for the MBE system to be taken off-line for maintenance, as well as for source material replenishment and a major upgrade. In anticipation of this, we had used the MBE to produce all material required for the 100-nm initiative, ahead of the scheduled outage.

As anticipated, the upgrade work required a total of two months of off-line work. This scheduled work is now completed, and the MBE system is back in service, growing wafers for use in further POET device work.

Dr. Geoff Taylor, Chief Scientist of the Company, noted, "With the old MBE system, we had demonstrated the short wavelength optical capabilities of our process, mainly for datacenter applications. With our newly-upgraded MBE system, our capabilities have expanded to fabricating optical devices with long wavelengths. This is critical for our POET offerings in the long-haul, networking and optical equipment market."