Navitas Presents World’s First 8.5kW AI Data Center Power Supply Powered by GaN and SiC
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Next-generation solution achieves 98% efficiency with high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs for AI and hyperscale data centers
TORRANCE, Calif., Nov. 05, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced the world’s first 8.5 kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98% efficiency, for next-generation AI and hyperscale data centers.
The AI-optimized 54V output PSU complies with Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications and utilizes high-power GaNSafe and Gen-3 Fast SiC MOSFETs configured in 3-phase interleaved PFC and LLC topologies, to ensure the highest efficiency and performance, with lowest component count. The PSU’s shift to a 3-phase topology for both the PFC and LLC (vs. 2-phase topologies used by competing PSUs) enables the industry’s lowest ripple current and EMI. Furthermore, the PSU reduces the number of GaN and SiC devices by 25% compared with the nearest competing system, which reduces the overall cost. The PSU has an input voltage range of 180 to 264 Vac, a standby output voltage of 12 V, and an operating temperature range of -5oC to 45oC. Its hold-up time at 8.5 kW is 10 ms, with 20 ms possible through an extender.
The 3-Phase LLC topology is enabled by high-power GaNSafe, which is specifically created for demanding, high-power applications, such as AI data centers and industrial markets. Navitas’ 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of RDS(ON)MAX from 25 to 98 mΩ.
The 3-Phase interleaved CCM TP-PFC is powered by Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology, which has been enabled by over 20 years of SiC innovation leadership and offers world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.