Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being developed by the company. (Graphic: Business Wire)
First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs
GREENSBORO, N.C., January 16, 2025--(BUSINESS WIRE)--Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being developed by the company. These unmatched discrete transistors provide up to 50W of saturated power for customers within the wireless infrastructure, military, aerospace and industrial heating markets who are looking to integrate bare die within their own custom MMICs.
Each device offers exceptional flexibility, supporting either 50V or 28V supply rails while covering multiple octaves of operational bandwidth for continuous wave, linear, and pulsed modulation schemes. When using a 50V rail, the GRF0030D is rated for 50W (PSAT) operation from DC to 6GHz, with gain varying from 13.5dB to 23.7dB. The device also supports 28V operation while delivering up to 27.5W of saturated output power. Similarly, the GRF0020D variant provides up to 30W and 19W of saturated power when using 50V and 28V rails, respectively. This slightly lower power HEMT supports frequencies up to 7GHz while providing 13.8dB to 24.3dB of gain. As with all of Guerrilla RF’s bare die offerings, each device is 100% DC production tested to ensure KGD (known good die) compliance.
According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 to $2.7B by 2028. This growth is driven by expansion in key segments relevant to Guerrilla RF, including telecom infrastructure (5G and point-to-point systems), military, and satellite communications, with projected compound annual growth rates of 10%, 13%, and 18%, respectively. Additionally, GaN on SiC variants are expected to dominate the market for the next decade.
Ryan Pratt, CEO and founder of Guerrilla RF, commented, "GaN technology is critical for next-generation, high-performance, energy-efficient RF systems and devices. We’re already seeing strong demand for the GRF0020D and GRF0030D." He added, "Another advantage is that these devices are fabricated in the U.S., aligning with the objectives of the CHIPS Act of 2022 and ensuring a robust, domestic supply chain for our customers."
Founded in 2013, Guerrilla RF, Inc., develops and manufactures high-performance, state-of-the-art radio frequency (RF) and microwave semiconductors for wireless OEMs in multiple high-growth market segments, including network infrastructure for 5G/4G macro and small cell base stations, SATCOM, cellular repeaters/DAS, automotive telematics, military communications, navigation, and high-fidelity wireless audio. The Company has an extensive portfolio of 100+ high-performance RF and microwave semiconductor devices with 50+ new products in development. As one of the fastest-growing semiconductor firms in the industry, Guerrilla RF drives innovation through its R&D to commercialization initiatives and focuses on product excellence and custom solutions to underserved markets. The Company has shipped over 200 million devices and has repeatedly been included in Inc. Magazine’s annual "Inc. 5000" list. Guerrilla RF has made the top "Inc. 500" list for two years in a row. For more information, please visit https://guerrilla-rf.com or follow the Company on LinkedIn.
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