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New PERSYST EM064LX and EM128LX HR STT-MRAM Expanding Use in Aerospace, Automotive, and Industrial Applications Unveiled at Embedded World 2025
CHANDLER, Ariz., March 10, 2025--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced its latest high-reliability MRAM expansion. The newest additions to the PERSYST EMxxLX family, the EM064LX HR and EM128LX HR, will operate at temperatures from -40°C to +125°C, meeting the AEC-Q100 Grade 1 standard for automotive applications. This expanded temperature range addresses the growing demand for persistent, high-speed memory in aerospace, defense, and extreme industrial environments.
"As embedded systems continue to push the boundaries of reliability and endurance, memory technology must keep pace with extreme operating environments," said Sanjeev Aggarwal, President and CEO at Everspin Technologies. "Our latest high-reliability PERSYST MRAM provides designers with a robust, fast, and scalable alternative to Static RAM or NOR flash, ensuring mission success in automotive, aerospace, and industrial applications."
The rapid expansion of Low Earth orbit (LEO) satellite deployments is driving demand for high-reliability memory solutions capable of withstanding extreme operating conditions, including tolerance to radiation. With LEO satellites playing an increasing role in infrastructure and connectivity, memory solutions that offer high-speed performance, extended endurance, and resilience to extreme temperatures are essential for ensuring mission success.
"Everspin's MRAM has proven to be an optimal solution for demanding space exploration and LEO satellite missions," said Billy Wahng, Chief Technology Officer of Astro Digital. "The addition of the HR high-rel version will give us the option to broaden the operating range of our systems."
Everspin's PERSYST MRAM has been widely adopted for almost two decades in critical storage applications, recognized for its high endurance and reliability. As the fastest MRAM available in its temperature range, the latest PERSYST expansion delivers the performance and durability required for next-generation embedded systems:
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Capacities of 64Mb and 128Mb – Optimized for mission-critical systems.
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Quad SPI Interface – Industry-standard compatibility for easy integration.
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Faster Write Speeds vs. NOR Flash – Reducing system overhead in real-time applications.
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Simpler architecture – No erase required enhancing system utilization.